Standard

IEC 62373-1:2020 ED1

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Corrigendums and amendments are bought separately.

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Abstract

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs). This document also defines the terms pertaining to the conventional BTI test method.

Document information

  • Standard from IEC
  • Published:
  • Edition: 1
  • Version: 1
  • Document type: IS
  • ICS 31.080.30
  • ISO TC TC 47