Standard

NEK EN 60749-34:2004

Apr 2004 Withdrawn

Note: This standard has a new edition: NEK EN 60749-34:2010

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Abstract

Used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed causing rapid changes of temperature. The power cycling test is complementary to high temperature operating life.

Document information

Standard from NEK
Published: 16 April 2004
Withdrawn: 1 December 2013
Edition: 1
Version: 1
Document type: NAT
ISBN:

ICS 31.080
National Committee NEK/NK47

Product Relations

Replaced by: NEK EN 60749-34:2010
Referred by: NEK EN 62047-4:2010
Refers: NEK EN 60747-15:2004
Refers: IEC 60748-23-5:2003 ED1
Refers: NEK EN 60749-3:2002
Refers: IEC 60747-6:1983 ED1
Adopted from: EN 60749-34:2004 , 0

NEK EN 60749-34:2004

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NEK EN 60749-34:2010